Scanning IR microscopy and transmission electron microscopy studies of inhomogeneities in LEC S-doped InP

被引：0
|
作者：
Jin, N.Y. [1 ]
Booker, G.R. [1 ]
Grant, I.R. [1 ]
机构：
[1] Oxford Univ, Oxford, United Kingdom
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1993年 / B20卷 / 1-2期
关键词：
Annealing - Dislocations (crystals) - Infrared spectroscopy - Ingots - Optical variables measurement - Semiconductor doping - Sulfur - Transmission electron microscopy;
D O I：
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学科分类号：
摘要：
Inhomogeneities in S-doped InP wafers from LEC-grown ingots were characterized by both scanning IR microscopy (SIRM) and transmission electron microscopy (TEM). The main inhomogeneities revealed were dislocations, both decorated with particles and non-decorated, interior and surface particles, and dopant striations. It was found that higher S doping gave a significantly lower dislocation density and more pronounced dislocation decoration. Post-grown annealing at 1000 °C resulted in a higher dislocation density and the formation of small interior precipitate particles of high density. The SIRM and TEM observations correlated well with each other.
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页码：94 / 99
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