High Jc epitaxial superconducting YBa2Cu3O7-x thin films

Perfect epitaxial grown YBCO thin films showed high Jc about 2.16 × 106A/cm2. The epitaxial orientations were varied by controlling the substrate temperature, the orientation of the substrate material and the oxygen partial pressure. The geometrical arrangement of the substrate lead to increase the surface mobility of adatoms and prevents negative oxygen ion bombardment of the growing films which was useful to obtain c-axis oriented films. The study on the surface and interface properties of epitaxial YBCO thin films is in progress.