Anomalous mobility enhancement in heavily carbon-doped GaAs

被引：0
|
作者：
机构：
来源：
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 75期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
相关论文
共 50 条
  • [1] ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAAS
    CHEN, HD
    FENG, MS
    LIN, KC
    CHEN, PA
    WU, CC
    WU, JW
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) : 5453 - 5455
  • [2] Auger recombination in heavily carbon-doped GaAs
    Ahrenkiel, RK
    Ellingson, R
    Metzger, W
    Lubyshev, DI
    Liu, WK
    APPLIED PHYSICS LETTERS, 2001, 78 (13) : 1879 - 1881
  • [3] ANNEALING EFFECTS ON HEAVILY CARBON-DOPED GAAS
    HAN, WY
    LU, Y
    LEE, HS
    COLE, MW
    SCHAUER, SN
    MOERKIRK, RP
    JONES, KA
    YANG, LW
    APPLIED PHYSICS LETTERS, 1992, 61 (01) : 87 - 89
  • [4] OBSERVATION OF INTERSTITIAL CARBON IN HEAVILY CARBON-DOPED GAAS
    HOFLER, GE
    HSIEH, KC
    APPLIED PHYSICS LETTERS, 1992, 61 (03) : 327 - 329
  • [5] Electroluminescence and photoluminescence from heavily carbon-doped GaAs
    Tian, XS
    ELECTRO-OPTIC AND SECOND HARMONIC GENERATION MATERIALS, DEVICES, AND APPLICATIONS II, 1998, 3556 : 147 - 151
  • [6] HOLE MOBILITY IN CARBON-DOPED GAAS AND (ALGA)AS
    NAKWASKI, W
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 132 (01): : K47 - K49
  • [7] THE PRESENCE OF ISOLATED HYDROGEN DONORS IN HEAVILY CARBON-DOPED GAAS
    FUSHIMI, H
    WADA, K
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 420 - 426
  • [8] No-alloy ohmic contact to heavily carbon-doped GaAs
    Lian, P
    Lv, H
    Yin, T
    Chen, CH
    Xu, ZT
    Ma, SH
    Zhang, HQ
    Liu, DJ
    Ma, XY
    Chen, LH
    Shen, GD
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 681 - 684
  • [9] No-alloy ohmic contact to heavily carbon-doped GaAs
    Beijing Polytechnic Univ, Beijing, China
    International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, : 681 - 684
  • [10] Hydrogen induced degradation in heavily carbon-doped GaAs diodes
    Fushimi, H
    Wada, K
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196-2 : 957 - 961
12345