NOVEL CONTACT PROCESS FOR POWER MOSFET'S.

被引：0
|
作者：
Chen, G. [1 ]
Sapp, S. [1 ]
Wylie, N. [1 ]
Hu, Chenming [1 ]
机构：
[1] Fairchild Semiconductor, San Rafael,, CA, USA, Fairchild Semiconductor, San Rafael, CA, USA
来源：
Electron device letters | 1986年 / EDL-7卷 / 12期
关键词：
N AND P DIFFUSIONS - OVER-SINTERING - POWER MOSFET;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：672 / 673
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