Chapter 3 Magnetooptical Properties of Hg1-x Cd x Te Alloys

被引:6
|
作者
Weiler, M.H.
机构
关键词
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I
10.1016/S0080-8784(08)60130-1
中图分类号
学科分类号
摘要
引用
收藏
页码:119 / 191
相关论文
共 50 条
  • [1] Chapter 2 Crystal Growth and Properties of Hg1-x Cd x Se Alloys
    Whitsett, C.R.
    Broerman, J.G.
    Summers, C.J.
    Semiconductors and Semimetals, 1981, 16 (0C) : 53 - 118
  • [2] Chapter 4 Nonlinear Optical Effects in Hg1-x Cd x Te
    Kruse, Paul W.
    Ready, John F.
    Semiconductors and Semimetals, 1981, 16 (0C) : 193 - 253
  • [3] Structure and properties of Cd x Hg1-x Te-metal contacts
    Stafeev, V. I.
    SEMICONDUCTORS, 2009, 43 (05) : 608 - 611
  • [4] Low-frequency optical lattice vibrations in Hg1-x Cd x Te alloys
    Kozyrev, S. P.
    PHYSICS OF THE SOLID STATE, 2008, 50 (11) : 2164 - 2169
  • [5] The influence of hydrogenation on the electrical properties of the Cd x Hg1-x Te epitaxial structures
    Varavin, V. S.
    Sidorov, G. Yu.
    Garifullin, M. O.
    Vishnyakov, A. V.
    Sidorov, Yu. G.
    SEMICONDUCTORS, 2011, 45 (03) : 397 - 402
  • [6] Structural Properties of Cd x Hg1-x Te Solid-Solution Nanoparticles
    Sredin, V. G.
    Nikiforov, V. N.
    Zagarskikh, V. I.
    TECHNICAL PHYSICS LETTERS, 2017, 43 (12) : 1057 - 1059
  • [7] Ohmic Contact of Au/Mo on Hg1-x Cd x Te
    Liu, Dan
    Lin, Chun
    Zhou, Songmin
    Hu, Xiaoning
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (06) : 2802 - 2807
  • [8] Evidence of the third (A +) level of the mercury vacancy in Cd x Hg1-x Te
    Gassan-zade, S. G.
    Strikha, M. V.
    Shepelskii, G. A.
    SEMICONDUCTORS, 2012, 46 (07) : 882 - 886
  • [9] Quantitative Auger Electron Spectroscopic Analysis of Hg1-x Cd x Te
    Gaucher, A.
    Martinez, E.
    Baylet, J.
    Cardinaud, C.
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (04) : 1255 - 1262
  • [10] Interaction Between AsHg and V Hg in Arsenic-Doped Hg1-x Cd x Te
    Wang, Ziyan
    Huang, Yan
    Chen, Xiaoshuang
    Zhao, Huxian
    Lei, Wen
    Lu, Wei
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (11) : 3054 - 3058