Physical origin of InAs quantum dots on GaAs(001)

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 7卷 / 783期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] The physical origin of InAs quantum dots on GaAs(001)
    Bottomley, DJ
    APPLIED PHYSICS LETTERS, 1998, 72 (07) : 783 - 785
  • [2] On the location of InAs quantum dots on GaAs(001)
    Xu, MC
    Temko, Y
    Suzuki, T
    Jacobi, K
    SURFACE SCIENCE, 2005, 589 (1-3) : 91 - 97
  • [3] Shape transition of InAs quantum dots on GaAs(001)
    Jacobi, K. (jacobi@fhi-berlin.mpg.de), 1600, American Institute of Physics Inc. (98):
  • [4] Shape transition of InAs quantum dots on GaAs(001)
    Xu, MC
    Temko, Y
    Suzuki, T
    Jacobi, K
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (08)
  • [5] Strain and optical transitions in InAs quantum dots on (001) GaAs
    Fu, Y
    Zhao, QX
    Ferdos, F
    Sadeghi, M
    Wang, SM
    Larsson, A
    SUPERLATTICES AND MICROSTRUCTURES, 2001, 30 (04) : 205 - 213
  • [6] Dynamics of the growth of InAs quantum dots on GaAs(001) substrates
    Westwood, D.I.
    Brown, I.H.
    Linsell, D.N.J.
    Matthai, C.C.
    Materials Research Society Symposium - Proceedings, 2000, 571 : 337 - 342
  • [7] Dynamics of the growth of InAs quantum dots on GaAs(001) substrates
    Westwood, DI
    Brown, IH
    Linsell, DNJ
    Matthai, CC
    SEMICONDUCTOR QUANTUM DOTS, 2000, 571 : 337 - 342
  • [8] Annealing effects on faceting of InAs/GaAs(001) quantum dots
    Placidi, E.
    Della Pia, A.
    Arciprete, F.
    APPLIED PHYSICS LETTERS, 2009, 94 (02)
  • [9] Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots
    Tisbi, E.
    Latini, V.
    Patella, F.
    Placidi, E.
    Arciprete, F.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (23)
  • [10] Morphology of self-assembled InAs quantum dots on GaAs(001).
    Arciprete, F
    Patella, F
    Fanfoni, M
    Nufris, S
    Placidi, E
    Schiumarini, D
    Balzarotti, A
    SELF-ASSEMBLY PROCESSES IN MATERIALS, 2002, 707 : 179 - 184
12345