THRESHOLD REDUCTION BY THE ADDITION OF PHOSPHORUS TO THE TERNARY LAYERS OF DOUBLE-HETEROSTRUCTURE GaAs LASERS.

被引：0
|
作者：
Dyment, J.C.
Nash, F.R.
Hwang, C.J.
Rozgonyi, G.A.
Hartman, R.L.
Marcos, H.M.
Haszko, S.E.
机构：
来源：
| 1973年
关键词：
D O I：
暂无
中图分类号：
TN2 [光电子技术、激光技术];
学科分类号：
0803 ; 080401 ; 080901 ;
摘要：
By the addition of phosphorus to the ternary layers of standard double-heterostructure GaAs injection lasers, a 25% reduction in lasing current threshold has been obtained. Measurements of external differential quantum efficiencies point to a reduction in optical loss as the origin of this observation, and improvements in layer morphology suggest that an optical scattering mechanism may have been eliminated. Abstract only.
引用
收藏
相关论文
共 50 条
12345