Optical absorption and electronic transport in ion-implantation-doped polycrystalline SiC films

被引:0
|
作者
Hellmich, W. [1 ]
Mueller, G. [1 ]
Kroetz, G. [1 ]
Derst, G. [1 ]
Kalbitzer, S. [1 ]
机构
[1] Technische Universitaet Muenchen, Muenchen, Germany
关键词
D O I
暂无
中图分类号
学科分类号
摘要
15
引用
收藏
页码:193 / 201
相关论文
共 50 条
  • [1] OPTICAL-ABSORPTION AND ELECTRONIC TRANSPORT IN ION-IMPLANTATION-DOPED POLYCRYSTALLINE SIC FILMS
    HELLMICH, W
    MULLER, G
    KROTZ, G
    DERST, G
    KALBITZER, S
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 61 (02): : 193 - 201
  • [2] STRUCTURE AND PROPERTIES OF ION-IMPLANTATION-DOPED P-N-JUNCTIONS IN SIC
    KALININA, EV
    SUVOROV, AV
    KHOLUYANOV, GF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (06): : 652 - 654
  • [3] ROLE OF ATHERMAL PROCESSES IN PULSED ANNEALING OF ION-IMPLANTATION-DOPED SI FILMS
    ITALYANTSEV, AG
    MORDKOVICH, VN
    TEMPER, EM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (05): : 577 - 578
  • [4] STRUCTURE AND PROPERTIES OF ION-IMPLANTATION-DOPED p-n JUNCTIONS IN SiC.
    Kalinina, E.V.
    Suvorov, A.V.
    Kholuyanov, G.F.
    Soviet physics. Semiconductors, 1980, 14 (06): : 652 - 654
  • [5] Ion implantation doping of polycrystalline SiC thin films prepared by PECVD
    Kroetz, G.
    Hellmich, W.
    Mueller, G.
    Derst, G.
    Kalbitzer, S.
    Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1993, 80-81 (pt 2):
  • [6] OPTICAL-ABSORPTION AND ELECTRICAL-CONDUCTIVITY OF SIC FILMS PRODUCED BY ION-IMPLANTATION
    ROTHEMUND, W
    FRITZSCHE, CR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (04) : 586 - 588
  • [7] POSITRON ANNIHILATION IN ION-IMPLANTATION-DOPED SILICON SINGLE CRYSTALS.
    Dekhtyar, I.Ya.
    Sakharova, S.G.
    1978, 20 (04): : 625 - 628
  • [8] ELECTRONIC TRANSPORT IN POLYCRYSTALLINE FILMS
    BUBE, RH
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1975, 5 : 201 - 224
  • [9] INTERSTITIAL DIFFUSION OF IMPURITIES FROM ION-IMPLANTATION-DOPED LAYERS IN GERMANIUM
    GODAKOV, SS
    KLYUKVIN, AB
    MIKHAILUTSA, EV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (12): : 1372 - 1374
  • [10] INFLUENCE OF RADIATION-DOSE ON DIFFUSION PROCESSES IN ION-IMPLANTATION-DOPED LAYERS
    KUTUKOVA, OG
    STRELTSOV, LN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (04): : 475 - 476