IONOGRAPHIC PATTERNS WITH AMORPHOUS/CRYSTALLINE CONTRAST.

被引：0
|
作者：
Kalbitzer, S. [1 ]
机构：
[1] Max-Planck-Institut für Kernphysik, P. O. Box 10 39 80, Heidelberg, D-6900, Germany
来源：
Applied physics. A, Solids and surfaces | 1987年 / A44卷 / 02期
关键词：
LITHOGRAPHY - SEMICONDUCTING FILMS - Radiation Effects - SEMICONDUCTOR DEVICE MANUFACTURE - Silicon on Sapphire Technology;
D O I：
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中图分类号：
学科分类号：
摘要：
Ion irradiation of thin layers of crystalline semiconductors induces a phase transition to the amorphous state. The concomitant optical contrast between unirradiated, crystalline, and irradiated, amorphous material may be used for pattern fabrication in the submicron range. This process is explained by the example of silicon single-crystal layers on sapphire.
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页码：153 / 155
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