(N11)A GaAs: A preferable platform for high quality GaAs/AlGaAs structures

被引：0
|
作者：
Shtrikman, H. [1 ]
Hanien, Y. [1 ]
Soibel, A. [1 ]
Meirav, U. [1 ]
机构：
[1] Dept. of Condensed Matter Physics, Weizmann Institute of Science, 76100, Rehovot, Israel
来源：
Microelectronics Journal | / 30卷 / 04期
关键词：
Electron gas structures - Hole gas structures;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have successfully used (311)A and (511)A GaAs for the realization of high quality two-dimensional hole gas (2DHG) and electrons gas (2DEG) structures, respectively. This study was performed mostly on a back-gated, inverted interface, GaAs/AlGaAs structure, in which a 2DHG or 2DEG is embedded. This particular structure enabled the variation of the 2D carrier concentration over two orders of magnitude in a single device, as well as measurement of extremely low carrier densities in the mid 109 cm-2 range. This remarkably low carrier concentration achieved both in a 2DHG and in a 2DEG opens new frontiers for the study of mesoscopic phenomena governed by Coulomb interactions between carriers and, in particular, the possible existence of a Wigner crystal.
引用
收藏
页码：323 / 328
相关论文
共 50 条
  • [1] (N11)A GaAs:: a preferable platform for high quality GaAs/AlGaAs structures
    Shtrikman, H
    Hanien, Y
    Soibel, A
    Meirav, U
    MICROELECTRONICS JOURNAL, 1999, 30 (4-5) : 323 - 328
  • [2] AlAs oxidation process in GaAs/AlGaAs/AlAs heterostructures grown by molecular beam epitaxy on GaAs (n11)A substrates
    Vaccaro, PO
    Koizumi, K
    Fujita, K
    Ohashi, T
    MICROELECTRONICS JOURNAL, 1999, 30 (4-5) : 387 - 391
  • [3] STRAINED INGAAS QUANTUM-WIRE AND BOX STRUCTURES SELF-ORGANIZED ON HIGH-INDEX GAAS (N11)A AND (N11)B SUBSTRATES
    NOTZEL, R
    TEMMYO, J
    TAMAMURA, T
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 990 - 991
  • [4] High Q resonators in the GaAs and AlGaAs on insulator platform
    Chang, Lin
    Boes, Andreas
    Pintus, Paolo
    Peters, Jon D.
    Kennedy, M. J.
    Jin, Warren
    Guo, Xiao-Wen
    Yu, Su-Peng
    Papp, Scott B.
    Bowers, John E.
    2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2019,
  • [5] ALGAAS TO GAAS ENERGY-TRANSFER MECHANISMS IN ALGAAS/GAAS STRUCTURES
    KARPINSKA, K
    GODLEWSKI, M
    ZYTKIEWICZ, ZR
    CHEN, WM
    WEBER, ER
    ACTA PHYSICA POLONICA A, 1992, 82 (04) : 713 - 716
  • [6] Dissociation of As4 molecules during molecular beam epitaxy of GaAsP on (n11)A and (n11)B GaAs substrates
    Tatsuoka, Y
    Uemura, M
    Kitada, T
    Shimomura, S
    Hiyamizu, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (01): : 282 - 285
  • [7] GaAs/GaAs0.8P0.2 quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy
    Tatsuoka, Y
    Kamimoto, H
    Kitano, Y
    Kitada, T
    Shimomura, S
    Hiyamizu, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03): : 1155 - 1157
  • [8] GROWTH OF HIGH-QUALITY GAAS-ALGAAS QUANTUM WELL STRUCTURES
    KONG, MY
    SUN, DZ
    LIANG, JB
    HUANG, YN
    ZHEN, YP
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (06) : 417 - 421
  • [9] HIGH-QUALITY (111)B GAAS, ALGAAS, ALGAAS/GAAS MODULATION DOPED HETEROSTRUCTURES AND A GAAS/INGAAS/GAAS QUANTUM-WELL
    CHIN, A
    MARTIN, P
    HO, P
    BALLINGALL, J
    YU, TH
    MAZUROWSKI, J
    APPLIED PHYSICS LETTERS, 1991, 59 (15) : 1899 - 1901
  • [10] Dopant δ-layers in GaAs and GaAs/AlGaAs quantum structures
    Holtz, PO
    Sernelius, B
    Ferreira, AC
    Pozina, G
    Monemar, B
    Mauritz, O
    Ekenberg, U
    Thordson, J
    Andersson, TG
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1998, 1-2 : 213 - 221
12345