0.10 μm dense hole pattern formation by double exposure utilizing alternating phase shift mask using KrF excimer laser as exposure light

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作者：
Nakao, Shuji [1 ]
Nakae, Akihiro [1 ]
Yamaguchi, Atsumi [1 ]
Tsujita, Kouichirou [1 ]
Wakamiya, Wataru [1 ]
机构：
[1] ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 5 A期
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页码：2686 / 2693
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    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (5A): : 2686 - 2693
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    [J]. OPTICAL MICROLITHOGRAPHY XX, PTS 1-3, 2007, 6520
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    [J]. INTERNATIONAL JOURNAL OF THE JAPAN SOCIETY FOR PRECISION ENGINEERING, 1995, 29 (03): : 229 - 234
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