PHOTOLUMINESCENCE EXCITATION STUDIES OF a-SiNx:H ALLOYS.

被引：24
|
作者：
Jackson, W.A. [1 ]
Searle, T.M. [1 ]
Austin, I.G. [1 ]
Gibson, R.A. [1 ]
机构：
[1] Univ of Sheffield, Dep of Physics,, Sheffield, Engl, Univ of Sheffield, Dep of Physics, Sheffield, Engl
来源：
Journal of Non-Crystalline Solids | 1985年 / 77-78 Dec II卷
关键词：
HYDROGEN INORGANIC COMPOUNDS - PHOTOLUMINESCENCE - SEMICONDUCTING SILICON COMPOUNDS - Hydrogenation;
D O I：
10.1016/0022-3093(85)90808-7
中图分类号：
学科分类号：
摘要：
Below gap excitation is shown to red shift the PL peak by greater than 14% of the gap in SiN//x alloys. In addition it produces a marked weakening of its temperature dependence.
引用
收藏
页码：909 / 912
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