Effect of MeV Au ion implantation on the composition of GaAs upon vacuum annealing: PIXE and XRF studies

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作者：

Inst of Physics, Bhubaneswar, India ^{[1
]}

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来源：

Nucl Instrum Methods Phys Res Sect B | / 3卷 / 403-410期

关键词：

Annealing - Composition effects - Gold - Ion implantation - Single crystals;

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摘要：

1.43 MeV Au++ ions have been implanted into semi-insulating GaAs(100) single crystal wafers to a dose of 1.5×1015 atoms/cm2 at a tilted geometry. Samples were subsequently annealed in vacuum in the temperature range of 500 to 850 °C. PIXE and XRF measurements, carried out with 2.61 MeV H+ and 14.8 keV X-rays respectively, indicate practically no As loss from the implanted region. A significant As loss from the unimplanted region has been measured. Optical micrographs taken on both the implanted and the unimplanted regions show the formation of Ga droplets on the unimplanted region above 600 °C annealing. However, no such features were observed in the implanted region up to 850 °C. This indicates that MeV Au ion implantation inhibits the As release from GaAs. For a given annealing temperature and duration the amount of As loss depends on the dose of implanted Au. A tentative explanation for these results is presented.

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