Device-quality tunnel junctions on the high-Tc superconductor HgBa2CuO4+δ

被引：0
|
作者：
Zasadzinski, John [1 ]
Chen, Jun [1 ]
Romano, P. [1 ]
Gray, K.E. [1 ]
Wagner, J.L. [1 ]
Hinks, D.G. [1 ]
机构：
[1] Illinois Inst of Technology, Chicago, United States
来源：
Applied Superconductivity | 1994年 / 2卷 / 10 -12 pt 1期
关键词：
Device quality tunnel junctions - Sub-gap conductances - Superconducting insulator superconducting tunnel junction device - Superconductor insulator normal metal tunnel junction device;
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页码：709 / 714
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