Research of damage thresholds of PC-type HgCdTe detector under CW-YAG laser

被引:0
|
作者
Natl Univ of Defense Technology, Changsha, China [1 ]
机构
来源
Qiangjiguang Yu Lizishu | / 4卷 / 552-556期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
4
引用
收藏
相关论文
共 5 条
  • [1] Temperature changes in PC-type HgCdTe detector irradiated by in-band and out-of-band laser beams
    College of Optoelectric Science and Engineering, National University of Defense Technology, Changsha 410073, China
    Qiangjiguang Yu Lizishu, 2008, 6 (912-916):
  • [2] Electrical response of PC-type HgCdTe detectorunder out-band 10.6 μm laser irradiation
    He Y.
    Jiang H.
    Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, 2010, 22 (12): : 2829 - 2833
  • [3] PV-type HgCdTe detector irradiated by out-of-band CW 10.6 μm laser
    Li L.
    Lu Q.
    Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, 2010, 22 (11): : 2535 - 2539
  • [4] Experiment study on HgCdTe (PC type) detector system irradiated by laser out of response waveband
    Wang, Rui
    Si, Lei
    Lu, Qi-Sheng
    Liu, Ze-Jin
    Jiguang Yu Hongwai/Laser and Infrared, 2003, 33 (05):
  • [5] Abnormal response of PV-type HgCdTe detector under intense laser irradiation
    He, Yuan-Xing
    Jiang, Hou-Man
    Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, 2008, 20 (08): : 1233 - 1237