New developments of less toxic group-V precursors for the metallorganic vapour phase epitaxy of III-V-semiconductors: in-situ-formation of As-H functions by thermal β-elimination of specific As-trialkyl compounds

Thermal decomposition studies and low pressure metallorganic vapor phase epitaxy (MOVPE) growth experiments have been performed using novel, less toxic arsinetrialkyl sources, which decompose by the β-hydride elimination process. Decomposition studies have been carried out under growth conditions in the MOVPE reactor by quadrupole mass spectroscopy (QMS). Experimental results indicate a promising potential of the class of β-eliminating As-compounds as replacement for arsine in the MOVPE.