Nanoimprint mold repair by Ga+ focused-ion-beam direct etching

被引：0

作者：

Watanabe, Keiichiro ^{[1
,2
]}

Kanda, Kazuhiro ^{[1
,2
]}

Haruyama, Yuichi ^{[1
,2
]}

Kaito, Takashi ^{[3
]}

Matsui, Shinji ^{[1
,2
]}

机构：

[1] University of Hyogo, Graduate School of Science, LASTI, 3-1-2 Koto, Kamigori, Ako, Hyogo 678-1205, Japan

[2] CREST JST, 5-3 Yonban-cho, Chiyoda-ku, Tokyo 102-8666, Japan

[3] SII Nanotechnology Inc., 36-1 Takenoshita, Oyama, Shizuoka 410-1393, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2004年 / 43卷 / 11 A期

关键词：

Chemical vapor deposition - Gallium - Ion beams - Photolithography - Polymethyl methacrylates - Positive ions - Reactive ion etching - Scanning electron microscopy - Thermal effects;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Nanoimprint lithography (NIL) Si molds with protrusion- and hollow-defects were repaired by Ga+ focused-ion-beam (FIB) direct etching and chemical-vapor-deposition (CVD). The usability of the repaired mold was confirmed by carrying out NIL on poly(methylmethacrylate) (PMMA). After the NIL process, Ga grains appeared on the etching-repaired mold, which was confirmed by scanning electron microscopy-energy dispersive spectrometry (SEM-EDS). The thresholds of ion dose and annealing temperature for Ga grain appearance are studied.

引用

页码：7769 / 7772

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