Control of β-Si3N4 crystal morphology and its mechanism (Part 2) - effect of lanthanide additives

被引：0

作者：

Kitayama, Mikito ^{[1
]}

Hirao, Kiyoshi ^{[2
]}

Toriyama, Motohiro ^{[2
]}

Kanzaki, Shuzo ^{[2
]}

机构：

[1] Synergy Ceramics Laboratory, Fine Ceramics Research Association, 1-1, Hirate-cho, Kita-ku, Nagoya-shi 462-8510, Japan

[2] Natl. Indust. Res. Inst. of Nagoya, 1-1, Hirate-cho, Kita-ku, Nagoya-shi 462-8510, Japan

来源：

Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan | 1999年 / 107卷 / 1251期

关键词：

Anisotropy - Annealing - Aspect ratio - Ceramic materials - Computer simulation - Crystals - Grain growth - Interfaces (materials) - Mathematical models - Morphology - Rare earth additions - Rare earth elements;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Alpha-Si3N4 powder mixed with SiO2 and Ln2O3 (Ln = La, Gd or Yb) was heat-treated at 1750-1900 °C. After removing the glassy phase, the morphologies of β-Si3N4 crystals were quantitatively analyzed. The aspect ratios of β-Si3N4 crystals doped with different lanthanide oxides increased in the order of La2O3>Gd2O3>Yb2O3 at high annealing temperatures. The anisotropic Ostwald ripening model successfully simulated grain growth behaviors of β-Si3N4 with different lanthanide additives, and suggested that the observed difference in grain growth behaviors be due to the change in the reaction rate at the (100) interface between the β-Si3N4 crystal and the Ln-Si-O-N liquid phase.

引用

页码：995 / 1000

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