首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
DUAL-GATE GaAs MESFETs: A LOW-NOISE ALTERNATIVE TO MOSFETs AT 1000 MHz.
被引:0
|
作者
:
Weitzel, C.W.
论文数:
0
引用数:
0
h-index:
0
Weitzel, C.W.
Paulson, W.
论文数:
0
引用数:
0
h-index:
0
Paulson, W.
Scheitlin, D.
论文数:
0
引用数:
0
h-index:
0
Scheitlin, D.
Vaitkus, R.
论文数:
0
引用数:
0
h-index:
0
Vaitkus, R.
机构
:
来源
:
|
1600年
/ 23期
关键词
:
DUAL GATE GAAS MESFETS;
D O I
:
暂无
中图分类号
:
学科分类号
:
摘要
:
引用
收藏
相关论文
共 50 条
[1]
DUAL-GATE GAAS-MESFETS - A LOW-NOISE ALTERNATIVE TO MOSFETS AT 1000 MHZ
WEITZEL, CE
论文数:
0
引用数:
0
h-index:
0
WEITZEL, CE
PAULSON, W
论文数:
0
引用数:
0
h-index:
0
PAULSON, W
SCHEITLIN, D
论文数:
0
引用数:
0
h-index:
0
SCHEITLIN, D
VAITKUS, R
论文数:
0
引用数:
0
h-index:
0
VAITKUS, R
MICROWAVES & RF,
1984,
23
(04)
: 120
-
&
[2]
GAAS DUAL-GATE MESFETS
FURUTSUKA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,OPT DEVICE RES LAB,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,OPT DEVICE RES LAB,KAWASAKI 211,JAPAN
FURUTSUKA, T
OGAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,OPT DEVICE RES LAB,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,OPT DEVICE RES LAB,KAWASAKI 211,JAPAN
OGAWA, M
KAWAMURA, N
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,OPT DEVICE RES LAB,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,OPT DEVICE RES LAB,KAWASAKI 211,JAPAN
KAWAMURA, N
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(06)
: 580
-
586
[3]
SUBMICRON SINGLE-GATE AND DUAL-GATE GAAS MESFETS WITH IMPROVED LOW-NOISE AND HIGH-GAIN PERFORMANCE
OGAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
OGAWA, M
OHATA, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
OHATA, K
FURUTSUKA, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
FURUTSUKA, T
KAWAMURA, N
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
KAWAMURA, N
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1976,
24
(06)
: 300
-
305
[4]
PERFORMANCE OF DUAL-GATE GAAS MESFETS AS GAIN-CONTROLLED LOW-NOISE AMPLIFIERS AND HIGH-SPEED MODULATORS
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD LABS,SOLID STATE LAB,PALO ALTO,CA 94304
LIECHTI, CA
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1975,
MT23
(06)
: 461
-
469
[5]
A LOW-NOISE DUAL-GATE GAAS-MESFET FOR UHF TV TUNER
NAMBU, S
论文数:
0
引用数:
0
h-index:
0
NAMBU, S
HAGIO, M
论文数:
0
引用数:
0
h-index:
0
HAGIO, M
NAGASHIMA, A
论文数:
0
引用数:
0
h-index:
0
NAGASHIMA, A
GODA, K
论文数:
0
引用数:
0
h-index:
0
GODA, K
KANO, G
论文数:
0
引用数:
0
h-index:
0
KANO, G
TERAMOTO, I
论文数:
0
引用数:
0
h-index:
0
TERAMOTO, I
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1982,
17
(04)
: 648
-
653
[6]
LOW-NOISE GAAS MESFETS
HEWITT, BS
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
HEWITT, BS
COX, HM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
COX, HM
FUKUI, H
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
FUKUI, H
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
DILORENZO, JV
SCHLOSSER, WO
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SCHLOSSER, WO
IGLESIAS, DE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
IGLESIAS, DE
ELECTRONICS LETTERS,
1976,
12
(12)
: 309
-
310
[7]
Drain temperature determination in dual-gate GaAs MESFETs
Kameche, M.
论文数:
0
引用数:
0
h-index:
0
机构:
Ctr Natl Tech Spatiales, Arzew 31200, Algeria
Ctr Natl Tech Spatiales, Arzew 31200, Algeria
Kameche, M.
JOURNAL OF COMPUTATIONAL ELECTRONICS,
2007,
6
(04)
: 421
-
424
[8]
Drain temperature determination in dual-gate GaAs MESFETs
M. Kameche
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National des Techniques Spatiales,
M. Kameche
Journal of Computational Electronics,
2007,
6
: 421
-
424
[9]
MODELING AND EVALUATION OF DUAL-GATE MESFETS AS LOW-NOISE, SELF-OSCILLATING, AND IMAGE-REJECTION MIXERS
TSIRONIS, C
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
TSIRONIS, C
MICROWAVES & RF,
1983,
22
(05)
: 101
-
&
[10]
DISTRIBUTED NUMERICAL MODELING OF DUAL-GATE GAAS-MESFETS
DARLING, RB
论文数:
0
引用数:
0
h-index:
0
DARLING, RB
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1989,
37
(09)
: 1351
-
1360
←
1
2
3
4
5
→