SPECIAL FEATURES OF POWER MOSFETs IN HIGH-FREQUENCY SWITCHING CIRCUITS.

被引：0

作者：

Severns, Rudy ^{[1
]}

Blanchard, Richard ^{[1
]}

Cogan, Adrian ^{[1
]}

Fortier, Tim ^{[1
]}

机构：

[1] Springtime Enterprises, Springtime Enterprises

来源：

Powerconversion and Intelligent Motion | 1987年 / 13卷 / 04期

关键词：

ELECTRONIC CIRCUITS; SWITCHING - INTEGRATED CIRCUITS - Design;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Power MOSFETs are intrinsically capable of very fast switching transitions. To achieve this potential requires careful device selection, circuit design, and circuit layout. The effect of the chip design and the package that is used to assemble the device is described.

引用

页码：22 / 23

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