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- [1] Charge-storage effect of vertically stacked InAs nanodots embedded in Al0.5Ga0.5As matrix JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2B): : 967 - 971
- [2] Charge storage effect of the vertically stacked InAs nanodots embedded in Al0.5Ga0.5As matrix 2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 39 - 42
- [4] Optical property of vertically stacked, selfassembled InAs quantum dots in Al0.5Ga0.5As barriers NANO-OPTICS AND NANO-STRUCTURES, 2002, 4923 : 91 - 97
- [5] Molecular beam epitaxial growth and characterization of the vertically aligned InAs quantum dots embedded in Al0.5Ga0.5As JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4A): : 1622 - 1628
- [7] Size dependent charge storage effect of the InAs nanodots in Al 0.5Ga0.5As/GaAs field-effect diodes Koike, K., 1600, American Institute of Physics Inc. (91):
- [8] Self-assembling molecular beam epitaxial growth of the InAs quantum dots embedded in deep Al0.5Ga0.5As barriers JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (4B): : L417 - L419