Charge-storage effect of vertically stacked InAs nanodots embedded in Al0.5Ga0.5As matrix

被引:0
|
作者
机构
[1] Koike, Kazuto
[2] Li, Shuwei
[3] Komai, Hisayoshi
[4] 1,Sasa, Shigehiko
[5] 1,Inoue, Masataka
[6] 1,Yano, Mitsuaki
来源
Koike, K. (yano@elc.oit.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 41期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 17 条
  • [1] Charge-storage effect of vertically stacked InAs nanodots embedded in Al0.5Ga0.5As matrix
    Koike, K
    Li, SW
    Komai, H
    Sasa, S
    Inoue, M
    Yano, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2B): : 967 - 971
  • [2] Charge storage effect of the vertically stacked InAs nanodots embedded in Al0.5Ga0.5As matrix
    Koike, K
    Li, S
    Komai, H
    Sasa, S
    Inoue, M
    Yano, M
    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 39 - 42
  • [3] Size dependent charge storage effect of the InAs nanodots in Al0.5Ga0.5As/GaAs field-effect diodes
    Koike, K
    Komai, H
    Li, S
    Yano, M
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (02) : 819 - 822
  • [4] Optical property of vertically stacked, selfassembled InAs quantum dots in Al0.5Ga0.5As barriers
    Li, SW
    Miao, GQ
    Jiang, H
    Yuan, G
    Song, H
    Jin, YX
    Koike, K
    NANO-OPTICS AND NANO-STRUCTURES, 2002, 4923 : 91 - 97
  • [5] Molecular beam epitaxial growth and characterization of the vertically aligned InAs quantum dots embedded in Al0.5Ga0.5As
    Koike, K
    Li, SW
    Yano, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4A): : 1622 - 1628
  • [6] Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots
    Li, SW
    Koike, K
    Sasa, S
    Inoue, M
    Yano, M
    Jin, YX
    SOLID STATE COMMUNICATIONS, 2003, 126 (10) : 563 - 566
  • [8] Self-assembling molecular beam epitaxial growth of the InAs quantum dots embedded in deep Al0.5Ga0.5As barriers
    Koike, K
    Ohkawa, H
    Yano, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (4B): : L417 - L419
  • [9] Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy
    Li, SW
    Koike, K
    JOURNAL OF CRYSTAL GROWTH, 2004, 263 (1-4) : 53 - 57
  • [10] Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
    Liu, HY
    Xu, B
    Gong, Q
    Ding, D
    Liu, FQ
    Chen, YH
    Jiang, WH
    Ye, XL
    Li, YF
    Sun, ZZ
    Zhang, JF
    Liang, JB
    Wang, ZG
    JOURNAL OF CRYSTAL GROWTH, 2000, 210 (04) : 451 - 457