Effects of ESD protections on latch-up sensitivity of CMOS 4-stripe structures

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Universita' di Modena, Modena, Italy [1 ]
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Microelectron Reliab | / 10-11卷 / 1561-1564期
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We would like to thank Drs. X. Guggenmons; K. Oettinger and W. Stadler (Siemens AG) for providing the samples and for useful discussions. This work has been supported by the EEC Project Prophecy of the Standards; Measurements and Testing Programme;
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