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120ns 1M EEPROM
被引:0
|作者:
Kobayashi, Kazuo
[1
]
Arima, Hideaki
[1
]
机构:
[1] LSI R&D Lab, Japan
来源:
关键词:
Data Storage;
Semiconductor - Integrated Circuits - Semiconductor Devices;
MOS;
D O I:
暂无
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摘要:
EEPROM (electrically erasable programmable read-only memory) devices are useful in firmware development because they can be programmed, read out, or erased easily using only a 5V power supply. The chief drawback of EEPROMs up to now has been a comparatively low storage density and slow access time compared to DRAMs and SRAMs. This state of affairs is now changing. Mitsubishi Electric has developed a 1M EEPROM employing a 1μm design rule, triple-polysilicon double-metal CMOS process that results in a small chip size and fast access time, in addition to high reliability achieved by built-in error checking and correcting circuits.
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页码:18 / 20
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