120ns 1M EEPROM

被引:0
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作者
Kobayashi, Kazuo [1 ]
Arima, Hideaki [1 ]
机构
[1] LSI R&D Lab, Japan
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关键词
Data Storage; Semiconductor - Integrated Circuits - Semiconductor Devices; MOS;
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摘要
EEPROM (electrically erasable programmable read-only memory) devices are useful in firmware development because they can be programmed, read out, or erased easily using only a 5V power supply. The chief drawback of EEPROMs up to now has been a comparatively low storage density and slow access time compared to DRAMs and SRAMs. This state of affairs is now changing. Mitsubishi Electric has developed a 1M EEPROM employing a 1μm design rule, triple-polysilicon double-metal CMOS process that results in a small chip size and fast access time, in addition to high reliability achieved by built-in error checking and correcting circuits.
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页码:18 / 20
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