IrSi Schottky-barrier infrared detectors with wavelength response beyond 12 μm

被引：0
|
作者：
Tsaur, B.-Y. [1 ]
Chen, C.K. [1 ]
Nechay, B.A. [1 ]
机构：
[1] MIT Lincoln Lab, Lexington, MA, USA
来源：
Electron device letters | 1990年 / 11卷 / 09期
关键词：
Boron - Iridium Silicon Alloys - Semiconducting Silicon - Ion Implantation - Semiconductor Diodes;
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摘要：
Schottky-barrier infrared detectors with a 4-nm-thick IrSi electrode have been fabricated on p-Si substrates previously implanted with low-energy boron ions. Low-energy boron ion implantation has been used to form a shallow p+-Si layer that lowers the barrier height of IrSi-Si Schottky-barrier contacts by the image-force effect and field-assisted tunneling. IrSi infrared detectors with a cutoff wavelength beyond 12 μm have been obtained by this technique. The optical barrier height found by spectral response measurements is 0.100 eV, which corresponds to a detector cutoff wavelength of 12.4 μm.
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页码：415 / 417
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