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- [1] INFLUENCE OF REABSORPTION ON THE DETERMINATION OF THE DIFFUSION LENGTH OF THE MINORITY-CARRIERS (LD) IN LIGHTLY DOPED GAAS BY THE METHOD OF AN ELECTRON-PROBE-INDUCED CURRENT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (06): : 696 - 697
- [4] DETERMINATION OF THE DIFFUSION LENGTH OF THE MINORITY-CARRIERS BY THE METHOD OF ELECTROMODULATED PHOTOLUMINESCENCE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (03): : 339 - 340
- [5] MEASUREMENT OF DIFFUSION LENGTH OF CURRENT CARRIERS IN SEMICONDUCTORS USING A MICROSCOPIC ELECTRON PROBE. Instruments and experimental techniques New York, 1981, 24 (2 pt 2): : 508 - 511
- [8] DETERMINATION OF DIFFUSION LENGTH OF MINORITY CARRIERS IN ELECTRON-BEAM-EXCITED N-TYPE GAAS PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 4 (01): : 249 - +
- [9] Minority Carrier Diffusion Length Measurements in Solar Cells by Electron Beam Induced Current 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015,