Influence of backsurface argon bombardment on SiO2-Si interface characteristics

被引：0

|

作者：

机构：

来源：

Appl Phys Lett | / 19卷 / 2687期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 50 条

[1] Influence of backsurface argon bombardment on SiO2-Si interface characteristics
Lai, PT
Huang, MQ
Zeng, X
Zeng, SH
Li, GQ
APPLIED PHYSICS LETTERS, 1996, 68 (19) : 2687 - 2689
[2] Improvement of the interface characteristics and breakdown characteristics of SiO2-Si system by backsurface Ar+ bombardment
1600, (23):
[3] INTERFACE STATES AT THE SIO2-SI INTERFACE
SCHULZ, M
SURFACE SCIENCE, 1983, 132 (1-3) : 422 - 455
[4] Foreword - The SiO2-Si Interface
Baumvol, I. J. R.
BRAZILIAN JOURNAL OF PHYSICS, 1997, 27 (02) : 291 - 291
[5] INFLUENCE OF SIO2-SI INTERFACE STATES ON SAW TRANSDUCTION IN A SIO2-SI LAYERED MEDIUM COVERED WITH A PIEZOELECTRIC OVERLAY
VENEMA, A
IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1982, 29 (03): : 163 - 163
[6] AUGER ANALYSIS OF SIO2-SI INTERFACE
JOHANNESSEN, JS
SPICER, WE
STRAUSSER, YE
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3028 - 3037
[7] METAL IMPURITIES AT THE SIO2-SI INTERFACE
HONDA, K
NAKANISHI, T
OHSAWA, A
TOYOKURA, N
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 463 - 468
[8] CHARGE FLUCTUATIONS IN SIO2-SI INTERFACE
NAKHMANSON, RS
SEVASTIANOV, SB
INTERNATIONAL JOURNAL OF ELECTRONICS, 1984, 57 (03) : 379 - 389
[9] CHARGES IN OXIDE AT SIO2-SI INTERFACE
REINECKE, TL
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 455 - 455
[10] ELECTRICAL CHARACTERISTICS OF SIO2-SI INTERFACE NEAR MIDGAP AND IN WEAK INVERSION
COOPER, JA
SCHWARTZ, RJ
SOLID-STATE ELECTRONICS, 1974, 17 (07) : 641 - 654

← 1 2 3 4 5 →