Deviations from Stoichiometry in Polytypes of Silicon Carbide Single Crystals.

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作者：
Il'in, V.A.
Piryutko, M.M.
Sorokin, N.D.
Tairov, Yu.M.
Tsvetkov, V.F.
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Neorganiceskie materialy | 1980年 / 16卷 / 06期
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摘要：
Methods of chemical and electron-probe determination of the silicon content in SiC single crystals are developed. It is shown that in single crystals of hexagonal SiC the ratio of the silicon concentration to the carbon concentration amounts to 1. 022 plus or minus 0. 016. It is established that the ratio of the silicon concentration in cubic SiC to that in hexagonal SiC is equal to 1. 008 plus or minus 0. 001.
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页码：1014 / 1017
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