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- [3] Structure and properties of GaAs [Left Angle Bracket] Mn [Right Angle Bracket] layers formed by ion implantation Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2004, 68 (01): : 65 - 68
- [4] Experimental evidence for a discrete transition to channeling for 1.0-MeV protons in Si[Left angle bracket]100[Right Angle Bracket] Physical Review A. Atomic, Molecular, and Optical Physics, 1998, 57 (04):
- [6] Peculiarities of electronic properties of δ[Left angle bracket]Sb[Right Angle Bracket] layers in epitaxial Si. II. Effects of weak localization and electron-electron interaction Fizika Nizkikh Temperatur (Kiev), 1996, 22 (10):