MAGNETOSENSITIVE ″MEMORY″ EFFECT.

被引：0

作者：

Altunyan, S.A.

Airapetyan, V.V.

Barkhudaryan, M.S.

Egiazaryan, G.A.

Stafeev, V.I.

机构：

来源：

Soviet physics. Semiconductors | 1981年 / 15卷 / 01期

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摘要：

SEMICONDUCTOR DIODES

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页码：12 / 14

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