Generation and focusing of intense ion beams with an inverse pinch ion diode

被引：0

作者：

Hashimoto, Yoshiyuki ^{[1
]}

Sato, Morihiko ^{[1
]}

Yatsuzuka, Mitsuyasu ^{[1
]}

Nobuhara, Sadao ^{[1
]}

机构：

[1] Himeji Inst of Technology, Himeji, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 6 A期

关键词：

Inverse pinch ion diodes;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Generation and focusing of ion beams using an inverse pinch ion diode with a flat anode has been studied. The ion beams generated with the inverse pinch ion diode were found to be focused at 120 mm from the anode by the electrostatic field in the diode. The energy and maximum current density of the ion beams were 180 keV and 420 A/cm2, respectively. The focusing angle of the ion beams was 4.3°. The beam brightness was estimated to be 1.3 GW/cm2&middotrad2. The focusing distance of the ion beams was found to be controllable by changing the diameters of the anode and cathode.

引用

页码：1922 / 1927

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