Effect of Si ion implantation in GaN and its thermal annealing temperature on yellow luminescence

被引：0
|
作者：
Zhang, Ji-Cai [1 ]
Dai, Lun [2 ]
Qin, Guo-Gang [2 ]
机构：
[1] Dept. of Phys., Qufu Normal Univ., Qufu 273165, China
[2] Sch. of Phys., Lab. for Mesoscopic Phys., Peking Univ., Beijing 100871, China
来源：
Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves | 2002年 / 21卷 / 05期
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摘要：
23
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页码：342 / 346
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