Influence of high pressure and temperature on defect structure of silicon crystals implanted with N or Si ions

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[1] Bak-Misiuk, J.
[2] Misiuk, A.
[3] Paszkowicz, W.
[4] Shalimov, A.
[5] Härtwig, J.
[6] Bryja, L.
[7] Domagala, J.Z.
[8] Trela, J.
[9] Wierzchowski, W.
[10] Wieteska, K.
[11] Ratajczak, J.
[12] Graeff, W.
来源：
Bak-Misiuk, J. (bakmi@ifpan.edu.pl) | 1600年 / Elsevier Ltd卷 / 362期
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The authors are indebted for Dr. G. Gawlik from the Institute of Electronic Materials Technology and M. Pru[!text type='js']js[!/text]zczyk (Institute of Electron Technology; Warsaw) for the sample preparation. This work was supported in part within European Commission Program ICA1-CT-2000-70018 (Centre of Excellence CELDIS) and by the grant No 4 T08A 034 23 (2002–2004) from the State Committee for Scientific Research;
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