Interference Effect on the Phase of Franz-Keldysh Oscillations in GaAs/AlGaAs Heterostructures

被引:0
|
作者
机构
[1] Takeuchi, Hideo
[2] Yamamoto, Yoshitsugu
[3] Hattori, Ryo
[4] Ishikawa, Takahide
[5] Nakayama, Masaaki
来源
Takeuchi, H. (takeuchi.hideo@lsi.melco.co.jp) | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词
Circuit oscillations - Crystal impurities - Electric field effects - Electron mobility - Light interference - Modulation - Phase shift - Photons - Semiconducting gallium compounds - Semiconductor materials - Spectroscopic analysis;
D O I
暂无
中图分类号
学科分类号
摘要
We have studied photoreflectance spectra of GaAs/Al0.3Ga 0.7As heterostructures from the viewpoint of the phase of Franz-Keldysh (FK) oscillations. The phase of the FK oscillations originating from the GaAs buffer layer shifts with the change of the Al0.3Ga 0.7As-layer thickness, while the period does not vary. The FK-oscillation phase does not depend on the pump power, which suggests that the phase shift is not caused by a difference in the magnitude of modulation. We propose a calculation model for FK oscillations that includes the interference of probe light. Photoreflectance spectra calculated on the basis of this model are compared with the measured spectra. We conclude that mixing of the real and imaginary parts of a modulated dielectric function, which is caused by the probe-light interference, gives rise to the phase shift of the FK oscillations. We also derive a novel analysis method for a linear plot of the extremum positions of FK oscillations based on the above line-shape model. The present method remarkably reduces ambiguity in the estimation of band-gap energy that is considerable in a conventional analysis.
引用
收藏
相关论文
共 50 条
  • [1] Interference effect on the phase of Franz-Keldysh oscillations in GaAs/AlGaAs heterostructures
    Takeuchi, H
    Yamamoto, Y
    Hattori, R
    Ishikawa, T
    Nakayama, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (11): : 6772 - 6778
  • [2] Analysis of a phase factor of Franz-Keldysh oscillations in GaAs/AlGaAs heterostructures
    Takeuchi, H
    Yamamoto, Y
    Hattori, R
    Ishikawa, T
    Nakayama, M
    IEICE TRANSACTIONS ON ELECTRONICS, 2003, E86C (10) : 2015 - 2021
  • [3] A STUDY OF FRANZ-KELDYSH OSCILLATIONS OF GAAS/SI/GAAS AND ALAS/SI/ALAS HETEROSTRUCTURES
    MELENDEZLIRA, M
    JIMENEZSANDOVAL, S
    LOPEZLOPEZ, M
    HERNANDEZCALDERON, I
    KAWAI, T
    PAK, K
    YONEZU, H
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) : 3616 - 3619
  • [4] ON THE ORIGIN OF FRANZ-KELDYSH OSCILLATIONS IN ALGAAS/GAAS MODULATION-DOPED HETEROJUNCTIONS
    NOVELLINO, RA
    VAZQUEZLOPEZ, C
    BERNUSSI, AA
    SCHMIDT, C
    CERDEIRA, F
    MOTISUKE, P
    POLLAK, FH
    MESEGUER, F
    PLOOG, K
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (10) : 5577 - 5581
  • [5] Study of Franz-Keldysh oscillations of GaAs/Si/GaAs and AlAs/Si/AlAs heterostructures
    1600, (American Inst of Physics, Woodbury, NY, USA):
  • [6] Franz-Keldysh effect in lateral GaAs/AlGaAs based npn structures
    Baumgartner, P
    Engel, C
    Bohm, G
    Abstreiter, G
    APPLIED PHYSICS LETTERS, 1997, 70 (21) : 2876 - 2878
  • [7] FRANZ-KELDYSH OSCILLATIONS OF DELTA-DOPED GAAS
    HSU, TM
    TIEN, YC
    LU, NH
    TSAI, SP
    LIU, DG
    LEE, CP
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (03) : 1065 - 1069
  • [8] ANALYSIS OF FRANZ-KELDYSH OSCILLATIONS IN PHOTOREFLECTANCE SPECTRA OF A ALGAAS/GAAS SINGLE-QUANTUM-WELL STRUCTURE
    HUGHES, PJ
    WEISS, BL
    HOSEA, TJC
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (12) : 6472 - 6480
  • [9] CHARACTERIZATION OF GAAS DEVICES USING THE FRANZ-KELDYSH EFFECT
    ROUSH, RA
    STOUDT, DC
    SCHOENBACH, KH
    KENNEY, JS
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 783 - 788
  • [10] FRANZ-KELDYSH EFFECT WITH GUNN DOMAINS IN BULK GAAS
    GUETIN, P
    BOCCONGI.D
    APPLIED PHYSICS LETTERS, 1968, 13 (05) : 161 - +