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- [5] Characterization of MOCVD-grown non-stoichiometric SiNx SURFACE & COATINGS TECHNOLOGY, 2008, 202 (17): : 4198 - 4203
- [6] MICROSTRUCTURE OF ANNEALED LOW-TEMPERATURE-GROWN GAAS-LAYERS APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (02): : 141 - 146
- [7] Transition from epitaxial to columnar growth of non-stoichiometric GaAs deposited at low temperatures ELECTRON MICROSCOPY 1998, VOL 3, 1998, : 455 - 456
- [10] Thermal stabilization of non-stoichiometric GaAs through beryllium doping DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS II, 1998, 510 : 55 - 59