Surface roughness induced by plasma etching of Si-containing polymers

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[1] Tserepi, A.
[2] Gogolides, E.
[3] Constantoudis, V.
[4] Cordoyiannis, G.
[5] Raptis, I.
[6] Valamontes, E.S.
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Valamontes, E.S. (vala@ee.teiath.gr) | 1600年 / VSP BV卷 / 17期
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Lithography - Plasma etching - Silicon - Surface roughness;
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摘要
Interfacial properties of polymers and their control become important at submicrometer scales, as polymers find widespread applications in industries ranging from micro- and nano-electronics to optoelectronics and others fields. In this work, we address the issue of controlled modification of surface topography of Si-containing polymers when subjected to oxygen-based plasma treatments. Treated surfaces were examined by atomic force microscopy to obtain surface topography and roughness of plasma-treated surfaces. Our experimental results indicate that an appropriate optimization of plasma chemistry and processing conditions allows, on one hand, small values of surface roughness, a result crucial for the potential use of these polymers for sub-100 nm lithography, and, on the other hand, desirable topography, applicable for example in sensor devices. Plasma processing conditions can be modified to result either in smooth surfaces (rms roughness < 1 nm) or in periodic structures of controlled roughness size and periodicity.
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