Study of power dissipation mechanism of SiH4 RF glow discharge by optical emission spectroscopy

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Shi, Wangzhou
Huang, Chong
Yao, Ruohe
Lin, Kuixun
Lin, Xuanying
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Energy dissipation - Glow discharges - Light emission - Plasmas - Silicon compounds;
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Optical emission spectra of SiH4 RF glow discharge were measured by OMA-4000 optical multichannel. Influences of RF power and gas flow rate on the emission intensity were investigated. It was found that different transitions related to the electric power dissipation take place during the increasing of RF power and gas flow rate. When gas flow rate increases to a certain value, the joule heating mechanism by which electrons gain energy occurs in the plasma bulk. When RF power increases to a certain value, the secondary electrons generated by positive ions bombarding cathode lead to the enhance of plasma optical emission.
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页码:144 / 145
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