DESIGN OF TEGFET DEVICES FOR OPTIMUM LOW-NOISE HIGH-FREQUENCY OPERATION.

被引：0
|
作者：
Jay, Paul R. [1 ]
Derewonko, Henri [1 ]
Adam, Didier [1 ]
Briere, Pierre [1 ]
Delagebeaudeuf, Daniel [1 ]
Delescluse, Philipe [1 ]
Rochette, Jean-Francois [1 ]
机构：
[1] Thomson Semiconducteurs, Orsay, Fr, Thomson Semiconducteurs, Orsay, Fr
来源：
| 1600年 / ED-33期
关键词：
D O I：
10.1109/t-ed.1986.22537
中图分类号：
学科分类号：
摘要：
10
引用
收藏
相关论文
共 50 条
  • [1] DESIGN OF TEGFET DEVICES FOR OPTIMUM LOW-NOISE HIGH-FREQUENCY OPERATION
    JAY, PR
    DEREWONKO, H
    ADAM, D
    BRIERE, P
    DELAGEBEAUDEUF, D
    DELESCLUSE, P
    ROCHETTE, JF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 590 - 594
  • [2] Optimization of heterojunction devices for high-frequency and low-noise operation
    Mateos, J
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS 2001, 2002, 384-3 : 11 - 18
  • [3] OPTIMUM SEMICONDUCTORS FOR HIGH-FREQUENCY AND LOW-NOISE MESFET APPLICATIONS
    GOLIO, JM
    TREW, RJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) : 1411 - 1413
  • [4] ULTRA LOW-NOISE AND HIGH-FREQUENCY OPERATION OF TEGFETS MADE BY MBE
    LAVIRON, M
    DELAGEBEAUDEUF, D
    ROCHETTE, JF
    JAY, PR
    DELESCLUSE, P
    CHEVRIER, J
    LINH, NT
    PHYSICA B & C, 1985, 129 (1-3): : 376 - 379
  • [5] Highly Linear High-Frequency Low-Noise Amplifier Design at ISM Band
    Bahadori-Jahromi, Farhad
    Zareian-Jahromi, Seyyed Jafar
    WIRELESS PERSONAL COMMUNICATIONS, 2018, 103 (03) : 2679 - 2692
  • [6] Highly Linear High-Frequency Low-Noise Amplifier Design at ISM Band
    Farhad Bahadori-Jahromi
    Seyyed Jafar Zareian-Jahromi
    Wireless Personal Communications, 2018, 103 : 2679 - 2692
  • [7] A HIGH-FREQUENCY LOW-NOISE ACOUSTIC STW VCO
    FLEISCHMANN, B
    RUSSER, P
    SCHALLER, A
    WEIGEL, R
    19TH EUROPEAN MICROWAVE CONFERENCE : MICROWAVE 89, 1989, : 1015 - 1020
  • [8] Cryogenic probe for low-noise, high-frequency electronic measurements
    Garcia, E.
    Bales, C.
    Patterson, W.
    Zaslavsky, A.
    Mitrovic, V. F.
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2022, 93 (10):
  • [9] A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
    Voinigescu, SP
    Maliepaard, MC
    Showell, JL
    Babcock, GE
    Marchesan, D
    Schroter, M
    Schvan, P
    Harame, DL
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (09) : 1430 - 1439
  • [10] Low-noise high-resolution BAW-based high-frequency oscillator
    Guillot, P.
    Philippe, P.
    Berland, C.
    Bercher, J. -F.
    Gamand, P.
    ELECTRONICS LETTERS, 2009, 45 (17) : 914 - 915
12345