Recent advances in the application of slow positron beams to the study of ion implantation defects in silicon

被引：0
|
作者：
Knights, A.P. [1 ,3 ]
Coleman, P.G. [2 ]
机构：
[1] Surrey Ion Beam Centre, Sch. Electron. Eng. Info. T., Univesity of Surrey, Guildford, Surrey GU2 5XH, United Kingdom
[2] School of Physics, University of Bath, Claverton Down, Bath BA2 7AY, United Kingdom
[3] Surrey Ion Beam Centre, University of Surrey, Guildford, GU2 5XH, United Kingdom
来源：
Diffusion and Defect Data. Pt A Defect and Diffusion Forum | 2000年 / 183卷
关键词：
Crystal defects - Electron beams - Ion implantation - Spectroscopic analysis;
D O I：
10.4028/www.scientific.net/ddf.183-185.41
中图分类号：
学科分类号：
摘要：
We review the most significant advances in the application of beam-based Positron Annihilation Spectroscopy (PAS) to ion implantation induced defects in silicon. Recent developments in the experimental technique and some prominent success stories are highlighted. These include descriptions of 2-detector Doppler broadening, enhanced depth resolution and beam lifetime measurements and applications to ion beam dosimetry, SIMOX formation and impurity gettering. The review concludes with suggestions for future trends in PAS. The technique is currently enjoying a high profile in ion implantation research. However, the need for the PAS community to consolidate current understanding and develop further the measurement and interpretation of data is paramount if PAS is to be regarded as the technique of choice for probing open-volume defects in silicon.
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页码：41 / 52
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