SCHOTTKY BARRIERS ON ORDERED AND DISORDERED SURFACES OF GaAs(110).

被引：0
|
作者：
Amith, A.
Mark, P.
机构：
来源：
| 1978年 / 15卷 / 04期
关键词：
1978_022017_783_1.xlsx;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
GALLIUM ARSENIDE - SCHOTTKY BARRIERS
引用
收藏
页码：1344 / 1352
相关论文
共 50 条
  • [1] SCHOTTKY BARRIERS ON ORDERED AND DISORDERED SURFACES OF GAAS(110)
    AMITH, A
    MARK, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1344 - 1352
  • [2] ELECTRICAL STUDY OF SCHOTTKY BARRIERS ON ATOMICALLY CLEAN GAAS(110) SURFACES
    NEWMAN, N
    VANSCHILFGAARDE, M
    KENDELWICZ, T
    WILLIAMS, MD
    SPICER, WE
    PHYSICAL REVIEW B, 1986, 33 (02): : 1146 - 1159
  • [3] OXIDATION OF ORDERED AND DISORDERED GAAS(110)
    CHYE, PW
    SU, CY
    LINDAU, I
    SKEATH, P
    SPICER, WE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1191 - 1194
  • [4] NI AND PD SCHOTTKY BARRIERS ON GAAS(110)
    WILLIAMS, MD
    KENDELEWICZ, T
    NEWMAN, N
    LINDAU, I
    SPICER, WE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 977 - 978
  • [5] Origin of Schottky barriers in gold contacts on GaAs(110)
    Reusch, TCG
    Wenderoth, M
    Winking, L
    Quaas, N
    Ulbrich, RG
    PHYSICAL REVIEW LETTERS, 2004, 93 (20) : 206801 - 1
  • [6] ELECTROCHEMICAL REACTIVITY OF ORDERED AND DISORDERED NORMAL-GAAS(110) SURFACES - A COMBINED XPS, LEED AND ELECTROCHEMICAL STUDY
    SOLOMUN, T
    RICHTERING, W
    GERISCHER, H
    BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1987, 91 (04): : 412 - 416
  • [7] SCHOTTKY BARRIERS ON GAAS
    MILLEA, MF
    MCCOLL, M
    PHYSICAL REVIEW, 1969, 177 (03): : 1164 - &
  • [8] SCHOTTKY BARRIERS ON ANNEALED GAAS
    CHOT, T
    TAM, NT
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (01): : K101 - K105
  • [9] SCHOTTKY CONTACTS TO CLEAVED GAAS (110) SURFACES .2. THERMODYNAMIC ASPECTS
    MCGILP, JF
    MCLEAN, AB
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (04): : 807 - 818
  • [10] NB/GAAS AND NBN/GAAS SCHOTTKY BARRIERS
    WU, XW
    ZHANG, LC
    BRADLEY, P
    CHIN, DK
    VANDUZER, T
    APPLIED PHYSICS LETTERS, 1987, 50 (05) : 287 - 289
12345