Intrinsic and extrinsic defects in semiconductors studied by perturbed γγ angular correlation spectroscopy

被引：0
|
作者：
Wichert, Th. [1 ]
机构：
[1] Universitaet des Saarlandes, Saarbruecken, Germany
来源：
Applied Physics A: Materials Science and Processing | 1995年 / 61卷 / 02期
关键词：
Atoms - Correlation theory - Matrix algebra - Mossbauer spectroscopy - Paramagnetic resonance - Perturbation techniques - Solid state physics - Tensors;
D O I：
10.1007/s003390050192
中图分类号：
学科分类号：
摘要：
The application of the perturbed γγ angular correlation technique as an analytical tool for the characterisation of atomic defect configurations is discussed. Using the radioactive probe atom 111In/111Cd, recent results on the compensation of acceptor and donor atoms in different II-VI semiconductors will be discussed, in particular the role of the cation vacancy defect.
引用
收藏
页码：207 / 212
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