METAL-ORGANIC VAPOUR PHASE EPITAXIAL GROWTH AND CHARACTERIZATION OF WIDE BAND-GAP II-VI MATERIALS.

Recent progress in metal-organic vapor phase epitaxial growth and characterization of the wide band-gap II-VI materials ZnSe, ZnSe//1// minus //yS//y(0 less than y less than 1) and ZnS is described. Attention is focussed on the nature of interfaces when these materials are grown on single crystalline III-V semiconductors where, in most cases, there is a lattice-mismatch between the epitaxial layer and substrate. The superior characteristics of the lattice-matched ternary ZnSe//0//. //9//5S//0//. //0//5 grown on GaAs are highlighted. Difficulties with doping studies are indicated and future lines of research are outlined.