Direct nonlinear FET parameter extraction using large-signal waveform measurements

被引：9
|
作者：
Werthof, A. [1 ]
van Raay, F. [1 ]
Kompa, G. [1 ]
机构：
[1] Univ of Kassel, Kassel, Germany
来源：
IEEE Microwave and Guided Wave Letters | 1993年 / 3卷 / 05期
关键词：
Capacitors - High electron mobility transistors - MESFET devices;
D O I：
10.1109/75.217205
中图分类号：
TN3 [半导体技术]; TN4 [微电子学、集成电路（IC）];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ; 1401 ;
摘要：
A new method is presented which permits a direct nonlinear FET parameter extraction of the drain current generator and the gate source capacitor from large-signal waveform measurements. For demonstration, the high frequency characteristics of the nonlinear drain current generator for a GaAs-MESFET and a MODFET are extracted. Significant differences between the dc and RF characteristics are observed and interpreted.
引用
收藏
页码：130 / 132
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