Chemistry of arsenic incorporation during GaAs/GaAs(100) molecular beam epitaxy probed by simultaneous laser flux monitoring and reflection high-energy electron diffraction

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J Vac Sci Technol B | / 4卷 / 2742期

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[1] Chemistry of arsenic incorporation during GaAs/GaAs(100) molecular beam epitaxy probed by simultaneous laser flux monitoring and reflection high-energy electron diffraction
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