SOME FEATURES OF THE PHOTOLUMINESCENCE OF EPITAXIAL TELLURIUM-DOPED N-TYPE AlxGa1 - xAs FILMS.

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作者：
Rogulin, V.Yu.
Shlenskii, A.A.
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来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1973年 / 7卷 / 05期
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摘要：
SEMICONDUCTING ALUMINUM COMPOUNDS
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页码：673 / 674
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