Hot-Carrier Degradation Rate of High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field-Effect Transistors under Maximum Substrate Current Stress Conditions

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[1] Chen, Shih-Hui
[2] Gong, Jeng
[3] Wu, Meng-Chyi
[4] Su, Alex Yu-Kwen
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Chen, S.-H. | 1600年 / Japan Society of Applied Physics卷 / 43期
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