RADIATION-INDUCED VARIATIONS IN THE SPECTRAL CHARACTERISTICS OF InxAs:Si LIGHT-EMITTING DIODES.

被引：0
|
作者：
Torchinskaya, T.V.
Semenova, G.N.
Berdinskikh, T.G.
Brailovskii, E.Yu.
机构：
来源：
Journal of applied spectroscopy | 1986年 / 45卷 / 02期
关键词：
SEMICONDUCTING INDIUM COMPOUNDS - Radiation Effects;
D O I：
10.1007/BF00657466
中图分类号：
学科分类号：
摘要：
The effect of irradiation by low and medium electron currents of subthreshold energies on the parameters of LEDs based on InGaAs/GaAs heterosystem with various structural perfection was studied. The feasibility of radiation-stimulated changes in the efficiency and spectral region of their emission are clarified.
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页码：828 / 833
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