Photoacoustic spectra of Si wafers at liquid helium temperature

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作者
Matsuyama, Hiroyuki [1 ]
Ikari, Tetsuo [1 ]
Yokoyama, Hirosumi [1 ]
Futagami, Koji [1 ]
机构
[1] Miyazaki Univ, Miyazaki, Japan
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Applications; (APP); -; Experimental; (EXP);
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摘要
Photoacoustic (PA) measurements of p- and n-type Si single crystals are carried out at liquid helium temperature (4.2 K). Two small peaks around 1.2 eV are observed in both samples. The energy of the higher-energy peak at 1.21 eV agrees with the thresholds of free exciton absorption with the emission of TO momentum-conserving phonons. The lower-energy peak shifts to the higher energy side with the decrease of the excitation light intensity. The possibility of the formation of an electron-hole drop for the lower energy peak will be discussed to explain the experimental results.
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页码:2904 / 2906
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