Dependence of the saturation of light-induced defect density in a-Si:H on temperature and light intensity

被引：0
|
作者：
Isomura, Masao [1 ]
Hata, Nobuhiro [1 ]
Wagner, Sigurd [1 ]
机构：
[1] Princeton Univ, Princeton, United States
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 11期
关键词：
Amorphous hydrogenated silicon - Light induced defect - Light intensity - Saturation - Staebler Wronski effect;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：3500 / 3505
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