Positron annihilation 2D-ACAR study of electron-irradiated silicon

被引:0
|
作者
Hasegawa, M.
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] STUDY OF DEFECTS IN GAAS BY 2D-ACAR POSITRON-ANNIHILATION
    MANUEL, AA
    AMBIGAPATHY, R
    HAUTOJARVI, P
    SAARINEN, K
    CORBEL, C
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C1): : 73 - 80
  • [2] POSITRON-ANNIHILATION IN ELECTRON-IRRADIATED SILICON
    AREFEV, KP
    VOROBEV, SA
    PROKOPEV, EP
    TSOI, AA
    FIZIKA TVERDOGO TELA, 1977, 19 (08): : 1339 - 1343
  • [3] Theoretical study on positron 2D-ACAR for semiconductors
    NEC Informatec Systems, Ltd, Tsukuba, Japan
    Materials Science Forum, 1997, 255-257 : 184 - 188
  • [4] Theoretical study on positron 2D-ACAR for semiconductors
    Saito, M
    Tang, Z
    Chiba, T
    Hasegawa, M
    POSITRON ANNIHILATION: ICPA-11 - PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON POSITRON ANNIHILATION, KANSAS CITY, MISSOURI, USA, MAY 1997, 1997, 255-2 : 184 - 188
  • [5] Positron annihilation study of electron-irradiated silicon-germanium bulk alloys
    Kawasuso, A
    Okada, S
    Yonenaga, I
    Honda, T
    Suezawa, M
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 127 - 132
  • [6] STUDY ON POSITRON-ANNIHILATION OF ELECTRON-IRRADIATED VANADIUM
    ALEKSEEVA, OK
    BYKOV, VN
    LEVDIK, VA
    MIRON, NF
    SHANTAROVICH, VP
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01): : K89 - K91
  • [7] Positron 2D-ACAR calculations on organic conductors
    Ishibashi, S
    Manuel, AA
    Hoffmann, L
    POSITRON ANNIHILATION: ICPA-11 - PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON POSITRON ANNIHILATION, KANSAS CITY, MISSOURI, USA, MAY 1997, 1997, 255-2 : 194 - 198
  • [8] Positron-annihilation 2D-ACAR study of divacancy and vacancy-oxygen pairs in Si
    Hasegawa, M
    Chiba, T
    Kawasuso, A
    Akahane, T
    Suezawa, M
    Yamaguchi, S
    Sumino, K
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1481 - 1489
  • [9] Positron-annihilation 2D-ACAR study of divacancy and vacancy-oxygen pairs in Si
    Hasegawa, Masayuki
    Chiba, Toshinobu
    Kawasuso, Atsuo
    Akahane, Takashi
    Suezawa, Masashi
    Yamaguchi, Sadae
    Sumino, Koji
    Materials Science Forum, 1995, 196-201 (pt 3): : 1481 - 1490
  • [10] STUDY OF DEFECTS IN ELECTRON-IRRADIATED SILICON BY VOLUME SPECTROSCOPY AND POSITRON-ANNIHILATION METHOD
    MOKRUSHIN, AD
    ARAVIN, LG
    SHANTAROVICH, VP
    YARYKIN, NA
    KHIMICHESKAYA FIZIKA, 1993, 12 (11): : 1512 - 1518