CALCULATION OF AN OSCILLATOR EMPLOYING A GUNN DIODE IN THE DOMAIN QUENCHING REGIME.

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作者：
Orlov, V.B.
Yakimov, A.V.
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来源：
Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika) | 1981年 / 26卷 / 11期
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713 Electronic Circuits - 714 Electronic Components and Tubes;
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摘要：
The parallel circuit of an oscillator that employs a microwave-frequency Gunn diode, operating in the domain-quenching regime, is discussed. The diode is described the time-dependent voltampere and volt-coulomb characteristics, which are hysteretic in nature. The quenching regime is realized if the sum of the d-c bias voltage and the a-c microwave voltage across the diode drops during the domain transit time through the sample to a value less than the domain resorption threshold.
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页码：152 / 154
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